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APT8024JFLL
800V 29A 0.260
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
APT8024JFLL
D G S
All Ratings: TC = 25C unless otherwise specified.
UNIT Volts Amps
800 29 116 30 40 460 3.68 -55 to 150 300 29 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.260 250 1000 100 3 5
(VGS = 10V, ID = 14.5A)
Ohms A nA Volts
5-2006 050-7076 Rev C
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT8024JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 29A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 29A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 29A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 533V VGS = 15V ID = 29A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
4670 860 155 160 24 105 9 5 23 4 605 490 975 585
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
29 116 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -29A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -29A, di/dt = 100A/s) Reverse Recovery Charge (IS = -29A, di/dt = 100A/s) Peak Recovery Current (IS = -29A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
300 600 2.0 6.7 13 22
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.3
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 5.95mH, RG = 25, Peak IL = 29A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID29A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
D = 0.9
0.20
0.7
0.15
0.5 Note:
PDM
5-2006
0.10 0.05 0
0.3
t1 t2
050-7076 Rev C
JC
0.1 0.05 10-5 10-4 SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
80 70 60 50 40 30 20 10 0 0 VGS =15 &10 V 8V
APT8024JFLL
ID, DRAIN CURRENT (AMPERES)
7.5V
TJ ( C)
0.0409 Dissipated Power (Watts) 0.0246 0.406 148.0 0.225
TC ( C)
0.00361
7V
ZEXT
6.5V 6V 5.5V
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
NORMALIZED TO = 10V @ 15.5A
ID, DRAIN CURRENT (AMPERES)
80
1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V
60
40 TJ = +125C 20 TJ = +25C 0 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = -55C
VGS=20V
0
30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 15.5A = 10V
V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-7076 Rev C
5-2006
114
ID, DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED BY RDS (ON)
APT8024JFLL
50
10,000
C, CAPACITANCE (pF)
100S
Ciss
10 5 TC =+25C TJ =+150C SINGLE PULSE 1mS 10mS
1,000 Coss
1
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
Crss
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 29A
200 100 TJ =+150C TJ =+25C 10
12
VDS= 160V VDS= 400V VDS= 640V
8
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 140 120 td(off)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80 70 60
V
DD G
= 533V
R
= 5
T = 125C
J
td(on) and td(off) (ns)
100 80 60 40 20 0
L = 100H
V
DD G
= 533V
R
= 5
tr and tf (ns)
50 40 30 20 10 tf
T = 125C
J
L = 100H
tr
td(on) 0 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
20
30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4000
V I
DD
0
0
10
20
2000
= 533V R = 5
= 533V
3500
SWITCHING ENERGY (J)
D J
= 29A
T = 125C
SWITCHING ENERGY (J)
1500
J
T = 125C
L = 100H E ON includes diode reverse recovery.
3000 2500 2000 1500 1000 500
L = 100H EON includes diode reverse recovery.
Eoff
1000 Eon 500 Eoff 0
Eon
050-7076 Rev C
5-2006
25 30 35 40 45 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
5
10
15
20
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
Gate Voltage
APT8024JFLL
10 % td(on) 90% tr 5% 10 %
Switching Energy
90%
T = 125 C J
Drain Current
Gate Voltage
td(off)
Drain Voltage
T = 125 C J
90% t f
5%
Drain Voltage
Switching Energy
10%
Drain Current
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7076 Rev C
5-2006
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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